WIN Semiconductors Corp., Taiwan, reports the development and deployment of 5G user equipment and network infrastructure for the sub-6GHz and mmWave frequency bands.
Front-end semiconductor technology has a significant influence on battery life and total power consumption of mobile devices and active antenna arrays employed in mmWave network infrastructure. 5G user equipment and MIMO access points will impose more difficult linearity/power consumption specifications than LTE, and WIN’s portfolio of GaAs technologies is designed to meet these new requirements.
The platforms integrate transmit-receive amplifier technologies with switch, logic and ESD protection functions for single chip, front-ends for mobile devices and MIMO access points operating in the sub-6GHz and mmWave 5G bands. PIH1-10 technologies can monolithically integrate a high efficiency Tx power amplifier (PA), ultra-low Fmin Rx low-noise amplifier (LNA) and low loss PIN switch in a single chip mmWave front-end.
The integrated GaAs technology provides optional linear Schottky diodes for power detectors and mixers, low capacitance PIN diodes for ESD protection and optimized E/D transistors for logic interfaces. This suite of capabilities comes in a humidity-rugged back-end, available with a copper redistribution layer and copper pillar bumps to reduce die size and allow flip chip assembly, enabling GaAs front-ends to fit within 28 and 39 GHz antenna lattice spacing.
