Researchers from Imec, Belgium, and the Fraunhofer Institute for Microstructure of Materials and Systems, Germany, will present “GHz-Scanning Acoustic Microscopy Combined with ToF-SIMS/AFM for Wafer-Level Failure Analysis of Bonding Interfaces,” at the 2019 ISTFA Conference in November.
This paper discusses the implementation of GHz-scanning acoustic microscopy (GHz-SAM) into a wafer level scanning tool and the application to the study of the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample.
In the current study, this thinning step has been carried out by applying the ion beam of a ToF-SIMS tool containing an in-situ AFM. This allows not only chemical analysis of the interface, but also well-controlled local thinning (size, depth and roughness).
Authors:
Prof. Ingrid De Wolf, Mr. Ahmad Khaled, Dr. Alexis Franquet, Dr. Valentina Spampinato, Dr. Thierry Conard, Imec, Leuven, Belgium
Dr. Sebastian Brand, Mr. Michael Kögel, Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany
Mr. Ingo Wiesler, PVA Tepla Analytical Systems GmbH, Westhausen, Germany
https://www.asminternational.org/web/istfa-2019/home
