Advanced Semiconductor Engineering Inc., Taiwan, announces that SEMI, the global micro- and nano-electronics industries association, has awarded ASE the 2014 SEMI Award for North America.
Physics World, the magazine of the Institute of Physics, U.K., has selected Magnonic Holographic Memory as one of the “2014 Ten Breakthroughs of the Year.”
Applied Materials Inc., Santa Clara, Calif., announces that it collaborated with Samsung Electronics Co. Ltd. and Korea’s PSK Inc. to develop an advanced patterning solution for the manufacture of future generations of NAND and DRAM device designs.
Researchers at Purdue University, West Lafayette, Ind., have created the first modern complementary metal-oxide-semiconductor device in which germanium is the semiconductor instead of silicon.