Imec Nano-Electronics Research Center, Belgium, is extending its gallium nitride-on-silicon (GaN-on-Si) R&D program.
Hitachi NX9000 enables real-time 3D structural analysis
Amkor to invest $60 million in China to expand assembly and test facility
Hybrid instrument combines photonic-nanomechanical force microscopy and nanospectroscopy
Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV
Oxford Instruments, U.K., has launched X-Max Extreme, a silicon drift detector for ultrahigh resolution FEG and FIB-SEM applications.




