Imec Nano-Electronics Research Center, Belgium, is extending its gallium nitride-on-silicon (GaN-on-Si) R&D program. The technology is reaching maturity, and companies can gain access to the platform by joining Imec’s GaN-on-Si industrial affiliation program (IIAP). The process line is also open to fabless companies interested in low-volume production of GaN-on-Si devices tailored to their specific needs, through dedicated development projects.
Imec’s R&D program was launched to develop a GaN-on-Si process and bring GaN technology towards industrialization. Building on its excellent track record in GaN epi-layer growth, new device concepts, and CMOS device integration, Imec has now developed a complete 200-mm CMOS-compatible GaN process line.
The extended initiative includes exploration of novel substrates to improve the quality of the epitaxial layers, new isolation modules to increase the level of integration, and the development of advanced vertical devices.
GaN technology offers faster-switching power devices with higher breakdown voltage and lower on-resistance than silicon, making it an outstanding material for advanced power electronic components.
In this next phase of the GaN program, Imec is focusing on further improving the performance and reliability of power devices, while in parallel pushing the boundaries of the technology through innovation in substrate technology, higher levels of integration, and exploration of novel device architectures.
“Since the program’s launch in July 2009, we have benefited from strong industry engagement, including participation from IDMs, epi-vendors, and equipment and material suppliers. This underscores the industrial relevance of our offering,” stated Rudi Cartuyvels, executive vice president of smart systems at Imec. “Interested companies are invited to become a partner and actively participate in our program. Imec’s open innovation model allows companies to have early access to next-generation devices and power electronics processes, equipment and technologies. and speed up innovation at shared cost.”
