Engineers from Imec, the Fraunhofer Institute, and Tepla Analytical Systems will present a discussion at ISTFA 2019 of a wafer-level failure analysis method in which scanning acoustic microscopy is combined with atomic force microscopy methods.
Specifically, this paper discusses the implementation of GHz-Scanning Acoustic Microscopy (GHz-SAM) into a wafer level scanning tool, and the application to the study of the interface of hybrid bonded wafers. It is demonstrated that the in-plane resolution of the GHz-SAM technique can be enhanced by thinning the sample.
In the current study, this thinning step has been performed by the ion beam of a ToF-SIMS tool containing an in-situ AFM, which allows not only chemical analysis of the interface, but also well-controlled local thinning (size, depth and roughness).
Title: “GHz-Scanning Acoustic Microscopy combined with ToF-SIMS/AFM for wafer-level failure analysis of bonding interfaces”
Prof. Ingrid De Wolf, Mr. Ahmad Khaled, Dr. Alexis Franquet, Dr. Valentina Spampinato, Dr. Thierry Conard, Imec, Leuven, Belgium
Dr. Sebastian Brand, Mr. Michael Kögel, Fraunhofer Institute for Microstructure of Materials and Systems IMWS, Halle, Germany
Mr. Ingo Wiesler, PVA Tepla Analytical Systems GmbH, Westhausen, Germany
