Researchers from JEOL Ltd., Japan, and JEOL USA, Peabody, Mass., will present a discussion about voltage contrast (VC) observation using a scanning electron microscope (SEM) and focused ion beam (FIB) at the ISTFA 2019 conference in November in Portland, Oregon. Combining SEM and FIB for voltage contrast observation is a common failure analysis technique for semiconductor devices. The resulting VC information allows understanding of failure localization issues.
In general, the VC images are acquired using secondary electrons from a sample surface at an acceleration voltage of 0.8 to 2.0 kV in SEM. In this study, researchers aimed to find the optimized electron energy range for VC acquisition using Auger Electron Spectroscopy (AES) for quantitative understanding.
Abstract of “Analysis of Voltage Contrast in Secondary Electron Image using High Energy Electron Spectrometer,” by Ms. Natsuko Asano, Dr. Shunsuke Asahina, JEOL Ltd., Akishima, Tokyo, Japan; and Dr. Natasha Erdman, JEOL USA Inc., Peabody, Mass.
