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ASM International
Home Nanotechnology

Argonne self-healing diamondlike carbon tribofilms reduce friction by 25 to 40%

Argonne National Laboratory, Lemont, Ill., announces that a research team has developed a self-lubricating diamondlike carbon tribofilm that regenerates itself by breaking down the molecules of lubricating oil and rebuilding the tribofilm as it is worn away.

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Bruker SkyScan benchtop system features high-speed X-ray microtomography

Bruker, Billerica, Mass., introduces the SkyScan 1275, a high-speed X-ray microtomography benchtop system specially designed for fast scanning using new advances in the technology of X-ray sources and efficient flat-panel detectors.

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JEOL module enables mass spectrometer materials analysis by ambient ionization

JEOL, Peabody, Mass., announces that a new FilterSpray module developed for the AccuTOF-DART mass spectrometer makes it possible to spot a sample on a disposable paper triangle for analysis by ambient ionization.

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Jeol module enables mass spectrometer materials analysis by ambient ionization

Jeol, Peabody, Mass., announces that a new FilterSpray module developed for the AccuTOF-Dart Mass Spectrometer makes it possible to spot a sample on a disposable paper triangle for analysis by ambient ionization.

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Hitachi launches transmission electron microscope with improved electro-optics

Hitachi High-Technologies Corp., Tokyo, introduces the HT7800 Series Transmission Electron Microscope, which features digital operation under normal room light conditions (like the HT7700 model) and also incorporates improved electro-optics with many new functions.

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Cadence to collaborate with TSMC for design innovation with its 12FFC process

Cadence Design Systems Inc., San Jose, Calif., announces its collaboration with the Taiwan Semiconductor Manufacturing Co. (TSMC) to further advanced-node design innovation with TSMC’s new 12nm FinFET Compact (12FFC) process technology.

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Swiss researchers develop X-ray tomography for 3-D imaging of 34-nm transistor on a chip

Researchers of the Paul Scherrer Institute in Switzerland have reportedly made detailed 3-D images of a commercially available computer chip, marking the first time a nondestructive method has visualized the paths of a chip’s internal 45-nm-wide wiring and its 34-nm-high transistors clearly without distortions or deformations.

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Barcelona scientists bond chips to circuit boards with ink containing silver nanoparticles

A team of researchers at the University of Barcelona has reportedly demonstrated a new bonding technique for surface mounted devices in which an inkjet printer with ink that incorporates silver nanoparticles bonds the devices.

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Kateeva doubles space to manufacture inkjet printing equipment for OLED displays

Kateeva, Newark, Calif., is expanding its headquarters by leasing an adjacent building at its Newark campus to facilitate production ramp-up of its Yieldjet inkjet printing manufacturing equipment for the global flat panel display industry.

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3D printing enables 50% less mass in titanium and graphite satellite structures

Space Systems Loral (SSL), Palo Alto, Calif., announces that it has successfully introduced additive manufacturing techniques for titanium and graphite structural components into its geostationary satellite platform.

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Sandia develops kinetic deposition of ceramic nanoparticles to build thin films

Sandia National Laboratories, Albuquerque, N.M., reports that its scientists have developed an aerosol deposition process in which ceramic nanoparticles form coatings when deposited at high speed at room temperature.

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NASA selects two proposals for Space Technology Research Institutes

NASA, Washington, has selected proposals for the creation of two multi-disciplinary, university-led research institutes: the Institute for Ultra-Strong Composites by Computational Design (US-COMP); and the Center for the Utilization of Biological Engineering in Space (CUBES).

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Germanium outperforms silicon in low-voltage transistors with low power

A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab) and the Cluster of Excellence Center for Advancing Electronics Dresden at the Dresden University of Technology in Germany report that they have demonstrated the first germanium-based transistor that can be programmed between electron-(n) and hole-(p) conduction.

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Global semiconductor sales reach $339 billion in 2016

The Semiconductor Industry Association (SIA), Washington, D.C., announces that the global semiconductor industry posted sales totaling $338.9 billion in 2016, the industry’s highest-ever annual sales and a modest increase of 1.1% over the 2015 total.

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Qualcomm and TDK announce launch of joint venture

Qualcomm Inc., San Diego, Calif., and TDK Corp., Tokyo, announce the completion of the previously announced joint venture under the name RF360 Holdings Singapore PTE. Ltd.

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Intel to invest $7 billion in 7-nm semiconductor fab in Arizona

Intel Corp., Santa Clara, Calif., plans to invest more than $7 billion to complete Fab 42, which is expected to be the most advanced semiconductor factory in the world.

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Worldwide semiconductor capital spending forecast to grow 2.9% in 2017

Worldwide semiconductor capital spending is projected to increase by 2.9% in 2017, to $69.9 billion, according to Gartner Inc.

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Global Foundries invests in fabs in the United States, Germany, and China

Global Foundries, Santa Clara, Calif., plans to expand its global manufacturing footprint by investing in its existing leading-edge fabs in the United States and Germany, expanding its footprint in China with a fab in Chengdu, and adding capacity for mainstream technologies in Singapore.

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Qualcomm and TDK announce launch of joint venture

Qualcomm Inc., San Diego, Calif., and TDK Corp., Tokyo, announce the completion of the previously announced joint venture under the name RF360 Holdings Singapore PTE Ltd.

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Flexible aluminum-doped zinc oxide designed as tunable fiber-optic material

The University of California San Diego reports that its engineers have developed a thin, flexible, light-absorbing material that absorbs more than 87% of near-infrared light, with 98% absorption at 1550 nanometers, the wavelength for fiber optic communication.

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Intel to invest $7 billion in 7-nm semiconductor manufacturing at Arizona fab

Intel Corp., Santa Clara, Calif., announces plans to invest more than $7 billion to complete Fab 42, which is expected to be the most advanced semiconductor factory in the world.

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Intel to invest $7 billion in 7-nm semiconductor manufacturing process in Fab 42

Intel Corp., Santa Clara, Calif., plans to invest more than $7 billion to complete Fab 42, which is expected to be the most advanced semiconductor factory in the world.

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Veeco to acquire Ultratech for its laser spike anneal technology

Veeco Instruments Inc., Plainview, N.Y., and Ultratech, Inc., San Jose, Calif., have signed a definitive agreement for Veeco to acquire Ultratech, a pioneer in laser spike anneal technology used for the production of semiconductor devices.

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Asylum Research develops full-featured video-rate atomic force microscope

Oxford Instruments Asylum Research, Goleta, Calif., announces the new Cypher VRS Video-Rate AFM, said to be the first and only full-featured video-rate atomic force microscope.

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Bruker acquires Hysitron for its nanomechanical testing instruments

Bruker, Billerica, Mass., announces that it has acquired Hysitron Inc., a technology leader in the development, manufacture, and sale of nanomechanical test instrumentation.

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Compact mechanical test system fits inside scanning electron microscopes

MTI Instruments, Albany, N.Y., introduces the MTII/Fullam SEMtester compact mechanical test system, which is specifically designed to fit inside scanning electron microscopes.

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Optical microscopy/laser spectroscopy instrument identifies micron-size particles

Researchers at the Massachusetts Institute of Technology’s Lincoln Laboratory, Cambridge, report that they have developed a microscope in which optical microscopy is combined with laser spectroscopy to enable identification of individual micron-sized particles.

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SUNY Poly-managed graphene p-n junction breakthrough wins physics award

Research managed by SUNY Polytechnic Institute, Utica, and conducted by a number of collaborating institutions, has led to findings that have been named a top ten 2016 breakthrough in physics by Physics World.

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Bruker XRD instrument designed to analyze epitaxial/polycrystalline thin films

Bruker AXS, Billerica, Mass., introduces the D8 Advance Plus as the newest member of the D8 Advance family of X-ray diffraction (XRD) solutions.

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Silicon-passivated germanium nMOS gate stack has reduced interface defect density

Imec, Belgium, has shown for the first time that a silicon-passivated germanium nMOS gate stack with reduced interface defect density reaches the same defect level as a silicon gate stack, and has high mobility with reduced positive bias temperature instability.

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