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1458 items found
SUNY Poly-managed graphene p-n junction breakthrough wins physics award
Published: January 21, 2017
Research managed by SUNY Polytechnic Institute, Utica, and conducted by a number of collaborating institutions, has led to findings that have been named a top ten 2016 breakthrough in physics by Physics World.
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Praxair opens air separation plant at Samsung Electronics in South Korea
Published: January 21, 2017
Praxair Inc., Danbury, Conn., has begun operations at its fourth air separation plant, a 1400-ton-per-day unit, and has upgraded the nitrogen pipeline system serving the Samsung site in Gyeonggi Province, South Korea.
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3D optical microscope provides high combined lateral and vertical resolution
Published: January 17, 2017
Bruker Corp., Billerica, Mass., reports that its Contour Elite 3D optical microscopes provide the high sensitivity and stability necessary for precision 3D surface measurements in applications and environments that are challenging for other metrology systems, such as R&D applications within the semiconductor and MEMS markets.
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Magnesium-scandium alloys show superelastic and shape memory properties
Published: January 16, 2017
Tohoku University, Japan, announces that a newly discovered magnesium-scandium alloy with a bcc structure shows a martensitic transformation and exhibits the superelastic effect at ?150°C (?238°F).
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NIST awards $12 million to MEP centers in 11 states to support manufacturers
Published: January 15, 2017
The National Institute of Standards and Technology, Gaithersburg, Md., announces that its Hollings Manufacturing Extension Partnership (MEP) program has awarded a total of nearly $12 million in first-year funding to 11 organizations that will operate MEP centers in Delaware, Hawaii, Iowa, Kansas, Maine, Mississippi, Nevada, New Mexico, North Dakota, South Carolina, and Wyoming.
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New electrochemistry ability enables Cypher ES AFM to study deposition, corrosion
Published: December 19, 2016
Oxford Instruments, Santa Barbara, Calif., announces that electrochemistry capabilities are now available on the Cypher ES atomic force microscope, the highest resolution, fast scanning AFM with environmental control.
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Silicon wafer fanout technology enables dense network of memory interface vias
Published: December 18, 2016
Amkor Technology Inc., Tempe, Ariz., announces completion of product qualification for its innovative silicon wafer integrated fan-out technology, which is designed to handle the demanding requirements of today's advanced mobile, networking, and system-in-package applications.
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Bruker XRD instrument designed to analyze epitaxial/polycrystalline thin films
Published: December 18, 2016
Bruker AXS, Billerica, Mass., introduces the D8 Advance Plus as the newest member of the D8 Advance family of X-ray diffraction (XRD) solutions.
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Silicon-passivated germanium nMOS gate stack has reduced interface defect density
Published: December 18, 2016
Imec, Belgium, has shown for the first time that a silicon-passivated germanium nMOS gate stack with reduced interface defect density reaches the same defect level as a silicon gate stack, and has high mobility with reduced positive bias temperature instability.
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New method allows study of individual defects in transistors
Published: December 18, 2016
University of Twente, Netherlands, reports that scientists from its MESA+ research institute have developed a method for studying individual defects in transistors.
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