High-performance MoS2 FETs made via unique doping process

Semiconductor Research Corp., Research Triangle Park, N.C., reports that a team of researchers from Purdue University, Lafayette, Ind.; SEMATECH, Albany, N.Y.; and SUNY College of Nanoscale Science and Engineering, Albany, N.Y., are working on high-performance molybdenum disulfide field-effect transistors.

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